Semiconductor element

Abstract

Abstract PURPOSE:To perform the memory functioning of a semiconductor element by providing means for individually injecting a current to a channel layer having low band edge energy of a transmission band and high electron mobility and applying a high electric field to a certain channel layer. CONSTITUTION:The band edge energy of a transmission band is provided to be low at GaAs layers 3a, 3b and high at GaAlAs layers 2a-2c. When a voltage is applied to electrodes 5a, 5b, electrons remain at the layers 3a, 3b having low potential while the applied voltage is low. However, when the applied voltage is raised, the electrons in the layers 3a emit out to the layer 3a having low mobility around the layer 3a. Accordingly, the resistance of the layer 3a is increased abruptly. The emitting electrons retain in the adjacent layer 3b, and even if the applied voltage between the electrodes 5a and 5b is removed, the electrons remain being collected at the potential well of the layer 3b. In other words, it performs the functioning as a memory element.

Inventors

• 👤 Noriaki Tsukada
• 👤 Takashi Nakayama
• 👤 Masahiro Nunoshita

Bibliographic Details