Heat treatment device

Abstract

Abstract PURPOSE:To activate a wafer without causing the redistribution of impurities through the activating treatment of an ion injecting region by mounting a means irradiation lamp rays onto a semiconductor substrate and a means relatively moving the substrate and the lamp rays. CONSTITUTION:The wafer holding plate 13, which is turned centering around a shaft 12 and to which a plurality of opening sections 11 holding the semiconductor wafers 1 at equal angle intervals are formed, is mounted. A heating oven 14 provided with infrared lamp devices 3 up and down in response to the opening sections 11 at predetermined positions is installed. The semiconductor wafers 1 held into the opening sections 11 are introduced successively into the heating oven 14 through the revolution of the wafer holding plate 13, and thermally treated. The opening sections 11 have projecting edges 15 inward extending, the semiconductor wafers 1 are held in hollows by the projecting edges 15, and the lamp rays are irradiated uniformly from both main surfaces of the wafers.

Inventors

• 👤 Kazuo Nishiyama

Bibliographic Details