Thin film magnetic sensor

Abstract

Abstract PURPOSE:To reduce the influence due to a temperature change, by arranging thin film element patterns in plural layers so that directions of axes, where magnetization is easy, of ferromagnetic thin film elements intersect on the same plane at about 90 deg.. CONSTITUTION:An MR element 7 for sensing and an MR element 8 for reference are arranged with their directions 9 of axes, where magnetization is easy, and current directions orthogonal to each other, and a signal magnetic field HS is introduced approximately orthogonally to the direction 9 of the element 7, and these elements are laminated through an insulating layer. When the signal magnetic field HS is applied in the direction orthogonal to the MR element 7 and is applied in parallel to the MR element 8, the resistance value of the MR element 7 is changed by the intensity of the magnetic field if the value of theta is made constant, and the resistance value of the MR element 8 is constant independently of the intensity of the magnetic field. Thus, a very stable sensor which is not affected by the temperature change due to sliding of a recording medium and the change of the ambient temperature of the substrate is obtained.

Inventors

• 👤 Takashi Matsumoto

Bibliographic Details