Detecting method for ion etching finishing point

Abstract

Abstract PURPOSE:To obtain an accurate pattern with good reproducibility by measuring resistance value between two positions on a thin conductive film and detecting the ion etching finishing point in accordance with the variation of the resistance value. CONSTITUTION:When a photoresist pattern 4 is formed on a conductor layer 3 on a wafer 11, a dummy pattern 13 equal to a pattern formed at two positions except the forming part on a chip 12 is formed thereon. A bin 14 having a cover 16 for protecting the etching is stood in contact with the conductor layer in the vicinity of each of both ends of the dummy pattern, and a resistance meter 15 is connected between the bins 14. An ion etching is performed in this state, and the etching finishing point is determined by the prescribed position in which the resistance value is increased and a curve rises. Thus, a microminiature pattern can be formed accurately with good reproducibility without visual observation.

Inventors

• 👤 Hideki Fujiwara
• 👤 Akira Hirano

Bibliographic Details