Semiconductor device

Abstract

Abstract PURPOSE:To decrease the reverse leakage currents of a high dielectric resistance element, and to improve yield by forming a phosphorus layer into a P type conductive layer shaping a planer junction (or onto an oxide film of an upper section) as a diffusion layer and gettering the phosphorus layer. CONSTITUTION:A channel stopping layer 5 is formed to the side wall section of an N type island region 2 supported by a region such as a polycrystal region 4, the P type diffusion layer 6 is shaped from the surface and planer diode structure is formed. N<+> Regions 7 through phosphorus diffusion are shaped into the P region 6 at the same time as a contact region 8, and the phosphorus layer 10 is molded onto a SiO2 film 9 of the surface of a substrate. After diffusion treatment, an electrode 11 in which end sections 11a are formed in field structure and an electrode 12 are shaped. Accordingly, the gettering effect of phsophorus works more effectively, and defective rate due to the reverse leakage current value can be reuced. An effect similar to the diffusion layer 7 can be obtained because the oxide film 9 is left partially on the region 6 in place of the formation of the phosphorus diffusion layer 7 and a phosphorus layer 10a is shaped to the upper section.

Inventors

• 👤 Tatsuo Shimura

Bibliographic Details