Power aging device for semiconductor device

Abstract

Abstract PURPOSE:To prevent the deterioration of characteristics due to the power aging of an extra-high frequency transistor by a method wherein a switching circuit to control power supply and a circuit section with which the switching will be opened by the oscillation output of the semiconductor device, are provided in the device. CONSTITUTION:In the device with which power aging is performed on the transistor (TR)Q having a high breaking frequency (>=7GHz) using base grounding, for example, a switching circuit 3 is connected to the power source VCB which supplies power to the TRQ. When the TRQ starts oscillation by wafting capacity C, this oscillation output is detected by a squelch circuit 2 through the intermidiary of a high-pass filter and the circuit 3 is opened, and the oscillation is stopped by breaking current from the power source VCB. The circuit 3 is closed by a circuit 2 after the oscillation has been discontinued and the power source VCB is turned on again. Through these procedures, as the oscillation can be prevented, the deterioration of characteristics such as decrease in the hFE of the TRQ and the like can be prevented.

Inventors

• 👤 Naoshi Kogure

Bibliographic Details