Manufacture of silicon semiconductor element

Abstract

Abstract PURPOSE:To enable forming of wiring into a complete dual layer by providing an Si-alloy layer which contacts ohmically with the connecting parts of polycrystalline Si of P and N types and by covering the whole surface with an SiO2 film when the polycrystalline Si of these types is applied to a diffusion layer and the like as a material for drawing out an electrode. CONSTITUTION:On a semiconductor substrate a source region 1 and a drain region 1' are formed diffusely and a field SiO2 film 2 is connected to the whole surface including the regions, while openings are made correspondingly to the regions 1 and 1'. Next, N type polycrystalline Si 3 contacting with the region 1 and P type polycrystalline Si 3' contacting with the region 1' are formed with extension on to the film 2 to be used for drawing an electrode. And, in the contacting part 7 is made a contact hole 6, wherein the Si-metal alloy layer 9 is embedded, and these are made to contact ohmically with each other. After that, the Si layers 3 and 3' and the alloy layer 9 are all covered with an SiO2 film 8 by the CVD method, whereby metal wiring on to the film 8 is made possible, and thus the integration of the device is improved.

Inventors

• 👤 Shoichi Komatsu

Bibliographic Details