Semiconductor device

Abstract

Abstract PURPOSE:To suppress an occurrence of a short channel phenomenon by a method wherein when the second conductive-type region is formed including a region in which a channel is formed on the first condutive-type semiconductor substrate, the depth of the second region is checked within the depth of a surface depletion layer formed by the voltage applied to a gate electrode. CONSTITUTION:The second conductive-type impurity region 8 including a channel formed part is formed by an ions injection on the surface layer of the first conductive-type semiconductor substrate 1 on which the ost conductive-type impurity diffusion region 7 is formed. At this time, the depth of the region 8 is specified within the depth of the surface depletion layer produced by the voltage which is applied to a gate electrode 5 to be formed later. After that, a gate insulating film 4 is cover-attached on the whole surface and the gate electrode 5 is formed on the film 4 corresponded to the channel region. Then, as usual, the source and the drain electrode regions 2, 3 respectively ar formed on the substrate 1. Thus, the short channel phenomemon is suppressed to occur and also a current drive capability is improved.

Inventors

• 👤 Isao Okura

Bibliographic Details