Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To simplify the manufacturing process, by obtaining a single crystal from a noncrystalline semiconductor film formed on an insulating film by laser irradiation, and forming the semiconductor device as an active layer. CONSTITUTION:A silicon disulfide film 2 is formed on a silicon semiconductor substrate 1, and a noncrystalline silicon film 3 is formed thereon by evaporation, sputtering, and the like. The patterning of said silicon film 3 is performed to form many islands, and a silicon dioxide film 4 is formed on the silicon film 3 by applying a thermal oxidation method and the like. The annealing is performed on said film 4 by the laser irradiation, and the noncrystalline silicon film 3 is transformed into single crystal 3'. Thereafter, various elements are formed by a conventional method with the single crystal silicon film 3' as an active layer. In this method, the semiconductor device having the structure which has never been obtained before can be manufactured in a simple process.

Inventors

• 👤 Yoshiiku Togei

Bibliographic Details