JPS5676579A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Longitudinal microwave transistor package
Assignee: Mitsubishi Electric Corp
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Filing: 1979-11-28
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Granted: —
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Expires: 1999-11-28
Abstract
Abstract PURPOSE:To enhance the assembling workability and improve the high frequency properties of the transistor element by mounting source and gate electrodes in a flip- chip type. CONSTITUTION:A ceramic substrate 2 provided with source and drain bonding areas 5 and 3 is formed on a heat dissipating conductor 48 having a gate bonding area 4, and a package is formed in this manner. The source and gate electrodes of a V-FET chip 1 are connected to the bonding areas 4, 5 of the package in a flip- chip type, and the drain electrode is connected to the bonding area 3 by a wire 6.
Inventors
- 👤 Masaaki Nakatani
- 👤 Hironobu Hatakeyama
- 👤 Aiichiro Nara
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 11:33
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W44/226; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/50; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/731; H10W90/737; H10W90/751; H10W90/756
Claims Analysis
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References Cited (Backward Citations)
JPS5240686U
Cited
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