Amplification switching semiconductor device

Abstract

Abstract PURPOSE:To improve the amplification degree without increasing the threshold voltage of a forward voltage drop by constituting the switching device by bonding means including a main semiconductor element, an amplification transistor and an intermediate transistor, amplifying means and feedback means. CONSTITUTION:A main semiconductor element 10 comprising a transistor is connected between terminals ME1 and ME2 connected to a power circuit, and bonding means 30' comprising an intermediate transistor 30 is connected in parallel to the element 10. Then, this connecting point is connected through lead-out means 40 to a feedback control transistor 51 and feedback control means 50 comprising a luminous diode 52 which is light irradiating means, and an amplification transistor 20 is provided in parallel to the element 10. Further, photosignal irradiating means 60 comprising a phototransistor 61 and a luminous diode 62 arranged in opposite thereto is provided in parallel to means 50 and 30', and light irradiation to the above means 60 is controlled to perform a power amplification of a high amplification.

Inventors

• 👤 Masahiko Akamatsu

Bibliographic Details