Semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device of a large power and a high pressure- resistance having high intercepting capacity by forming a high impurity concentration region in the periphery of a cathode electode constituting a thyristor, providing an annular current collecting electrode thereon and making the potential of the current collecting electrode equal to that of the cathode electrode. CONSTITUTION:P-type impurities are diffused on both front and back surfaces of an N-type Si substrate which becomes a base region, and one is used as a P-type emitter region 1 and another is used as a P-type base region 3. Then, a plurality of N-type emitter regions 4 are provided at a predetermined interval in the region 3, and on the surface of the region 3 exposed to the central part there is fitted a control electrode 7, and on the regions 4 at both sides there are fitted cathode electrodes 6 of short emitter structure while including the exposed surface of the region 3. Furthermore, an annular current collecting electrode 8 is applied around the peripheral edge of the region through a P<+>-type region 40, and the electrodes 6 and 8 have the same potential. Thereafter, on the back surface of the region 1 there is provided an anode electrode 5 and the peripheral edge of the element has a bevel structure, which is buried by a passivation member 200.

Inventors

• 👤 Tokuo Watanabe
• 👤 Masami Naito
• 👤 Tsutomu Yao
• 👤 Masahiro Okamura

Bibliographic Details