Semiconductor light receiving system

Abstract

Abstract PURPOSE:To prevent a carrier recombination and leakage and to obtain a high quantum efficiency by a method wherein a salient part is installed on an N<+> type substrate surface and an N layer is laid thereupon, then, the whole surface is coated and the N layer is installed and a P layer is selectively installed striding over the salient part. CONSTITUTION:An N epitaxial layer is laid upon an N<+> type substrate and applying a mask 71, it is etched to form N layers 26, 28. Next thereto, an N layer 29 is formed in an epitaxial growth, thus completing a basic body 31. The mask 71 is removed and applying an SiO2 mask 37, a P layer 40 is formed and electrodes 38, 39 are formed. Lattice constants of an N layer 30 including layers 28, 29, the N layer 26 and the N<+> substrate are made approximately equal and a forbidden band gap of the N layer 26 is made narrower than those of others, thus, the N layer is made substantially a photosensitive layer. On this account, on the light receiving surface 27, recombination of carrier or a leak current are hardly generated. In this way, in comparison with the existing system, a light receiving system having a sharply higher quantum efficiency is obtained.

Inventors

• 👤 Haruo Nagai
• 👤 Susumu Hata

Bibliographic Details