Semiconductor light emitting diode

Abstract

Abstract PURPOSE:To precisely control the size of a light emitting region in a semiconductor emitting diode and preferably dissipate heat therefrom by selectively forming different conducting type from a semiconductor layer therearound in the vicinity of an active layer or forming a buried layer having high resistance value thereat. CONSTITUTION:An N-type (or high resistance) InP (or InGaAsP) buried layer 5 is formed in the vicinity of an InGaAsP active layer 3. When a voltage is applied thereto, no current is flowed therethrough due is reverse bias (or high resistance) in the buried region 5, but a current is flowed only through a penetrating region 6. When forming a thin clad layer 4 under the region 6, the light emitting region may be equally formed to the shape of the region 6, and it is easy to precisely control it.

Inventors

• 👤 Hiroshi Nishi
• 👤 Mitsuhiro Yano
• 👤 Osamu Wada
• 👤 Yorimitsu Nishitani

Bibliographic Details