Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To eliminate the narrow effect of a semiconductor device by so forming other polycrystalline silicon film under a gate polycrystalline silicon film as to determined the channel width of an MOSFET. CONSTITUTION:A polycrystalline silicon film 10 for determining the channel width of an MOSFET is accumulated on a silicon oxide film 9, a gate silicon oxide film 11 is thereafter formed thereon, an opening 12 is perforated thereat, and a gate polycrystalline silicon film 13 becoming gate electrode or the like is accumulated thereon. Then, a photosensitive resin film is used as a mask to etch and remove the film 13 so as to retain the gate electrode and wire. Thereafter, with the film 13 as a mask the film 11 is etched and removed, and reverse conducting type impurity diffused region to the silicon substrate 1 is formed to become the source and drain and wires of the MOSFET. Subsequently, aluminum wiring is conducted thereon.

Inventors

• 👤 Akira Ando

Bibliographic Details