Working of semiconductor surface

Abstract

Abstract PURPOSE:To work the surface of a semiconductor roughly in a shape determined by the function formula by properly controlling the velocity and direction of the particles and the irradiation time in the irradiation of the medium or low speed charged particles. CONSTITUTION:When the medium or low speed charged particles are irradiated on the semiconductor, the etching rate is lower on the surface 6 than that on the surface 7 because of smaller incidence angle, while the etching rate is larger at the edge 8. At the same time, the etching rate is lower on the side 10 because of lower amount of the particles. Therefore, the etching rate is adjusted by turning the particle irradiation nozzle or turning the substrate with a work piece attached. This enables precise working even for a shape so complicated that must be determined by the function formula.

Inventors

• 👤 Koji Tomita
• 👤 Jiyunkou Takagi
• 👤 Tadaaki Inoue

Bibliographic Details