Growing method of hetero epitaxial layer

Abstract

Abstract PURPOSE:To obtain a hetero epitaxial layer having a superior crystallinity by a method wherein a laser beam is irradiated to an amorphous layer previously doped with an impurity in high density to increase the solid solubility forming easily a mixed crystalline layer at the surface layer part. CONSTITUTION:An Si doped layer 2 is provided on the surface of an Al2O3 substrate 1 by ion implantation, and an Nd-YAG pulse laser beam having a prescribed energy is irradiated to make the layer 2 selectively to be liquid phase state increasing the solid solubility against Si forming a mixed crystal 3 of (Al2O3)0.6Si0.2. Then by CVD method in the normal atmospheric pressure, heating the substrate at 950 deg.C and thermally decomposing SiH4, an Si epitaxial layer 4 having the crystal surface orientation of (100) can be obtained. The misfit between the Al2O3 substrate 1 and the Si epitaxial layer is reduced by the interlaying of the mixed crystal 3, the Si epitaxial layer having a superior crystallinity can be obtained and the self- diffusion of Al can be suppressed. Therefore a device having a superior characteristic can be obtained from this SOS substrate.

Inventors

• 👤 Kazuyoshi Shinada

Bibliographic Details