Forming method of metal pattern

Abstract

Abstract PURPOSE:To easily form metal patterns by the use of a lift-off method by performing exposure on a positive resist layer formed on a substrate, from a diagonal direction via a photomask so that the under face of the patterns positions on the inner side of the top face. CONSTITUTION:In the formation of electrode wiring layers etc. of semiconductor elements, a photomask 5 is contacted and fixed to the positive resist patterns 1' formed on a substrate 3, after which ultraviolet rays 7 etc. are irradiated at 60- 80 deg. angles from the diagonal direction with respect to shading patterns 6, thence ultraviolet rays 7' etc. are irradiated from the opposite direction. (When the patterns are circular, the irradiation is performed by such a method of irradiating the rays from the predetermined angle while rotating the substrate.) Next, a photosensitive region 8 is dissolved away so that the pattern under face 9 positions on the inner side of the top face 10. Thence, a metal such as Au is evaporation deposited the substrate 3 surface from a perpendicular direction, to form an Au layer 4', after which the resist layer 10 and the Au layer 4' thereon are removed to leave the Au patterns 4'.

Inventors

• 👤 Haruo Kawada

Bibliographic Details