Semiconductor device

Abstract

Abstract PURPOSE:To increase the contacting area of a bonding electrode with a leading metal led from an operation region in the same size as the conventional bonding electrode by bringing the bonding electrode into contact with the periphery of the bonding electrode with said metal. CONSTITUTION:A metal 12 led from an operation region 1 is retained in a ring shape around the bonding region of the bonding wire 3, and a bonding electrode metal 14 is formed thereon. Thus, a leading metal is eliminated directly under the bonding portion to remove the affect by bonding. Further, the bonding electrode is increased without increasing the size of a semiconductor element. Thus, the contacting area of the bonding electrode metal with the leading metal is increased to lower the contacting resistance therebetween, and the characteristics of the element can be thus improved.

Inventors

• 👤 Kunio Takatsuki

Bibliographic Details