Integrated circuit

Abstract

Abstract PURPOSE:To obtain a temperature coefficient and a sign by forming a monocrystalline semiconductor resitor and polycrystalline semiconductor resistor to be connected to a composite resistor when it is provided on the same semiconductor substrate composing the IC. CONSTITUTION:Two N<+> type implanted region 2 is formed by diffusion on a P type Si substrate 1 and an N type layer 3 is expitaxially grown over the entire surface thereof whereby the layer 3 is separated into 3 islandlike regions by an insulated region containing the region 2 in two regions. Then the islandlike regions are entirely covered with an insulating film 10 and respective openings are etched to form an NPN transistor which has a P type region 5 and an N type region 6 separatly on one region. Then, the P type regions 5 are diffused to the adjacent islandlike region to make the monocrystalline resistor 7 and then, a polycrystalline Si film 11 containing P type or N type impurities of a given concentration is accumulated on the islandlike region adjacent thereto but void of the implanted region to make the polycrystalline resistor 12 to which the resistor 7 is connected in series or in parallel as required. At this point, the selection of a sheet resistance for the resistor 12 will give a desired temperature coefficient.

Inventors

• 👤 Naotoshi Higashiyama
• 👤 Takeshi Kuwajima
• 👤 Koichi Fukaya

Bibliographic Details