Glassivating method for bevel-type semiconductor element

Abstract

Abstract PURPOSE:To permit a bevel-type semiconductor element to be glassivated by glassivating bevel-type semiconductor elements which have been maintained as a wafer by means of a polycrystalline Si layer. CONSTITUTION:On a semiconductor substrate 1 being a wafer, a bevel-type semiconductor element is formed, and emitter, base and collector electrodes 8, 9 and 10 are provided. Then both main surfaces of the substrate 1 are all coated with CVDSi oxide films 11 or CVDSi nitride films 11, on which a polycrystalline Si film 12 is fromed. After the film 11 on the opposite main surface of the substrate 1 is selectively masked with wax 13, bevel etch is performed to the interface between the emitter-side Si and film 11. On doing this the substrate 1 is divided into pellets, but they are maintained as a wafer by means of the film 12. After that, the sides of each pellet which have been exposed by the bevel etch are glassivated 14. Then the film 12 is removed, and therefore the pellets having been maintained as a wafer are saparated into pieces.

Inventors

• 👤 Yoshinobu Hayashi

Bibliographic Details