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JPS5649518A Expired / Lapsed JP ⏱️ 0.0 years remaining

Wafer treating desk

Assignee: Hitachi Ltd
•
Filing: 1979-09-28
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Granted: —
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Expires: 1999-09-28
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Abstract

Abstract PURPOSE:To make the flow of reaction gas to be smooth when a semiconductor wafer treating desk providing with a revolving large disk type rotary desk having rotating small disk type wafer treating desks on the upper side is to be constituted in a reaction room by a method wherein guide parts having a sloping sectional area are provided on the surface side at the circumferential parts of the small disk type wafer treating desks. CONSTITUTION:A revolving large disk type rotary desk 2 is arranged in a bell jar 1 constituting a reaction room, heaters 4 are provided at the back and plural rotating wafer treating desks 3 putting wafers 5 on them are provided on the surface of the rotary desk 2 to constitute a semiconductor wafer treating desk. In this constitution, concave parts are formed on the rotary desk 2 at the parts to be arranged with the treating desks 3, the treating desks 3 are sank in this places and guide parts 7 having slope on the surface are provided at their outer circumference. By this way, a reaction gas can flow smoothly on the guide parts 7, and especially the thickness of formed film at the circumferential part of the wafer 5 and the quality of film become uniform.

Inventors

  • 👤 Noboru Tatefuru

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-29 02:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584; H10P14/24; H10P14/3414; H10P14/3418

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