Semiconductor device and its preparation

Abstract

Abstract PURPOSE:To obtain an FET of low wiring resistance and high speed self-matchingly by forming a gate electrode using Al when making an insulated gate type MISFET and then forming source and drain regions by ion implantation using the electrode as a mask. CONSTITUTION:On the periphery of a P type Si substrate 1, a thick field SiO2 film 4 is formed, and on the surface of the substrate 1 surrounded by the film 4, a thin gate SiO2 film 5 is coated, and on the film, an Al gate electrode 6 is formed with its one end extending onto the film 4. Next, implanting impurity ions 7 into the substrate 1 using the electrode as a mask, N type source and drain regions 8 and 9 are formed, and then casting laser beams 10 all over the surface, the regions 8 and 9 are activated. By so doing, annealing of the regions 8 and 9 becomes self-matching since the surface 11 of the electrode 6 reflects the laser beams 10 and desired characteristics can be obtained.

Inventors

• 👤 Seiichi Iwamatsu

Bibliographic Details