Multilayer thin film functional element and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a stable voltage-controlled negative resistance characteristic of a multilayer thin film functional element by forming an insulator thin film of insulator containing conductive element when forming a metal-insulator-metal structured thin film diode with the insulator thin film of 10-40nm thick interposed between two thin film metallic electrodes. CONSTITUTION:An aluminum layer 1 of 300nm thick is covered in band shape in vacuum on an insulating substrate 4 made of oxide of glass, sapphire or epoxy resin or the like. Subsequently, an Au layer 5 and an Al layer 6 are alternately laminated in thickness of 0.5-2.5nm and 5.0nm respectively thereon, and the layer 6 is anodized with 3%-ammonium tartrate or 3%-ammonium citrate aqueous solution by a constant current formation. Thus, an Al2O3 film 7 of insulator containing Au is formed in a thickness of 20-30nm on the layer 1, an Au layer 3 is covered on the entire surface, and a thin film diode is thus formed. Thus, a large current of 40mA/cm<2> can be obtained, and a forming can be conducted in the atmosphere.

Inventors

• 👤 Nobuo Miyamoto
• 👤 Goro Matsumoto
• 👤 Atsushi Noya
• 👤 Mikio Hirano

Bibliographic Details