Etching method of aluminum or aluminum-base alloy film

Abstract

Abstract PURPOSE: To make it possible to carry out the etching with high accuracy, by using a compound free from oxygen as an undercoating of an aluminum film in the gas plasma etching containing chlorine. CONSTITUTION: In etching Al or an Al-base alloy by a reaction gas containing a gas of a compound havig chlorine as a constituent element, an undercoating is formed under a film or Al or an Al-base alloy film by a compound not containing oxygen as a constituent element. For example, said compound free from oxygen is silicon nitride, multicrystalline silicon, monocrystalline silicon or an org. resin. The Al-base alloy film preferably contains one or more of Si, Cu, Mg, Mn or Ti in an amount of 10wt% or less. An etching gas is, for example, CCl 4 or PCl 3 and an inert gas can be mixed therein. Thereby, when the plasma etching is carried out, side-etching does not take place even if over-etched and there is no etching residue and, therefore, highly accurate etching can be carried out. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Masatoshi Oda
• 👤 Kazuo Hirata

Bibliographic Details