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JPS5638362A Expired / Lapsed JP ⏱️ 0.0 years remaining

Preparation of coating solution for formation of high- purity silica film

Assignee: TOKYO DENSHI KAGAKU KABUSHIKI
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Filing: 1979-09-06
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Granted: —
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Expires: 1999-09-06
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Abstract

Abstract PURPOSE: To obtain the titled coating solution efficiently, by reacting a halogenated silane or alkoxysilane with a carboxylic acid or water in an organic solvent in the presence of a catalyst, followed by treating the reaction mixture with an ion exchange resin. CONSTITUTION: (A) A halogenated silane, e.g., silicon tetrachloride, etc. or alkoxysilane, e.g., methyl orthosilicate, etc. is reacted with (B) a carboxylic acid, e.g., glacial acetic acid, etc. or water in an organic solvent, e.g., methyl alcohol, etc. in the presence of a catalyst, e.g., hydrochloric acid, etc. to prepare a reaction mixture, which is treated with an ion exchange resin to give the desired coating solution. Preferably the above-mentioned reaction mixture is first treated with a strongly basic or weakly basic anion exchange resin and then with strongly acidic cation exchange resin. USE: Usable for insulating film for electronic parts, protecting film for metal surface or plating surface, or oriented film for liquid crystal cell, etc. COPYRIGHT: (C)1981,JPO&Japio

Inventors

  • 👤 Toshihiro Nishimura
  • 👤 Mitsuaki Minato
  • 👤 Akira Hashimoto
  • 👤 Muneo Nakayama

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 18:15
CPC Classifications
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