Capacitor

Abstract

Abstract PURPOSE:To obtain a capacitor having a high durability against alpha rays as used for a semiconductor memory by burying an insulating film in the capacitance region of a semiconductor substrate and obstructing the arrival of electrons or holes generated by the alpha rays to a memory cell. CONSTITUTION:An SiO2 film is coated on the surface of a P type Si substrate, is retained as the SiO2 film 8 only on the region used as a memory capacitance by a phtolithographic process, and is removed on the other portion thereof. Then, a P type layer 7 is epitaxially grown on the entire surface, a polycrystalline Si is formed on the film 8, a monocrystalline Si layer is formed on theportion except the film 8, and an N<+> type region 5 is diffused on a part in the monocrystalline layer. When a first electrode 2 disposed on the film 8 and a second electrode 3 disposed between the film 8 and the region 5 are thereafter formed on the layer 7 while being buried in the SiO2 film 1 by using polycrystalline Si, the film 1 interposed between the electrode 2 and the layer 7 is thinner in thickness than the other.

Inventors

• 👤 Natsuo Tsubouchi
• 👤 Shinichi Sato
• 👤 Masahiko Denda

Bibliographic Details