Semiconductor device

Abstract

Abstract PURPOSE:To increase the degree of integration by providing wirings or resistances of buried type at the nonused portion within a semiconductor substrate. CONSTITUTION:A resist mask 4-1 is applied on an Si substrate and an O ion injection layer 2-1 formed with the proper accelerating voltage and dose amount. Another layer 2-2 is formed by injecting the ions again with the different accelerating voltage. Then, with a resist mask 4-2 having openings at different positions, an ion injection layer 2-3 is formed by controlling the accelerating voltage. Thereafter when the Si substrate is treated at high temperature, each ion injection layer is converted into SiO2, so that a buried layer surrounded by insulators is achieved. Next, a layer with a desired resistance value is obtained by ion-injecting an appropriate amount of impurities with the same or opposite type to that of the substrate into that surrounded region and the heat treating. This arrangement makes it possible that the degree of integration for the device is increased by utilizing the nonused portion in the substrate.

Inventors

• 👤 Norio Endo

Bibliographic Details