← Back to Patent Explorer
JPS5637291A Expired / Lapsed JP ⏱️ 0.0 years remaining

Single crystal growing apparatus by floating zone melting method

Assignee: NEC Corp
•
Filing: 1979-08-29
•
Granted: —
•
Expires: 1999-08-29
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract PURPOSE: To prevent the heating efficiency of the titled growing apparatus from lowering owing to the scattering of an evaporated substance by coaxially arranging a predetermined cylindrical gas introduction pipe and a predetermined cylindrical gas exhaust pipe around a starting material rod and a grown crystal rod, respectively. CONSTITUTION: Nitrogen gas as an atmospheric gas is passed through transparent quartz pipe 6 from the lower end, and upper and lower cylindrical quartz pipes 7, 8 are arranged in pipe 6. Nitrogen gas is fed into lower pipe 8 and exhausted from upper pipe 7. By this construction an evaporated substance can be prevented from sticking to pipe 6, and the efficiency of heating melt zone 5 with a luminous lamp (not shown) can be prevented from lowering. COPYRIGHT: (C)1981,JPO&Japio

Inventors

  • 👤 Kenichi Shiraki

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-10-25 08:42
CPC Classifications
—

Claims Analysis

Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag