Semiconductor device

Abstract

Abstract PURPOSE:To make it possible to design the both forward current and backward current can be the optimum characteristic independently by a method wherein the route of the forward current and the backward current are separated. CONSTITUTION:A diode N-layer 10 different from an intermediate N-layer 4 is arranged on the surface of the intermediate P-layer 5, and this N-layer 10 is connected to the first electrode 1 on the surface 14. Further, the inverse breakdown voltage of P-N junction of this diode N-layer 10 is made several 10s or 100 volts higher than the inverse breakdown voltage in the forward direction barrier junction 9. When the forward direction barrier junction 9 is broke over, it does not give any effect to the forward direction characteristic, since the diode junction 13 is holding the breakdown voltage. The backward current that flows from the 2nd electrode 2 to the 1st electrode 1 does not flow through the resistance 11, the junction 9 which contribute to the forward current and flows through the route of low resistance passing the diode junction 13.

Inventors

• 👤 Shinichi Shiyugiyou

Bibliographic Details