Semiconductor device and its manufacture

Abstract

Abstract PURPOSE:To stabilize the semiconductor device electrically, mechanically, electrochemically and thermally by a method wherein the first metal films to be distributed on a semiconductor substrate at the substrate side and the second metal films to be distributed at the opposite side against the substrate interlaying an interlayer insulating film between them are made to have specific structures. CONSTITUTION:A base region 2 and an emitter region 3 are formed in a silicon substrate 1, and a planar surface is covered with a silicon oxide film 4. The first metal films 5 and 6 are formed on the silicon oxide film 4. The metal films 5, 6 are constituted by stacking from the substrate side titanium layers 51, 61, platinum layers 52, 62, gold layers 53, 63, molybdenum layers 54, 64. A silicon oxide film 8 is formed as the interlayer insulating film on the whole surface of this constitution, openings are formed at opening regions 91, 92 and the second metal films 10 and 11 are formed. The metal films 10, 11 are constituted by stacking titanium layers 101, 111, platinum layers 102, 112, gold layers 103, 113.

Inventors

• 👤 Toshiro Sakamoto

Bibliographic Details