Plasma etching method

Abstract

Abstract PURPOSE:To accelerate the delay of an etching starting time by adding Cl2 gas to CCl4 gas used for etching when etching a film containing Al. CONSTITUTION:An aluminum film-accumulated wafer 9 is placed on a cathode 4 in a vacuum container 1, the container 1 is evacuated by evacuating means 13, CCl4 and Cl2 gases are introduced from inlets 2, 3, and the pressures are regulated by a conductance valve 14. When high frequency electric power is applied from a high frequency power source 7 to the cathode, gas plasma is generated between the cathode 4 and an anode 5 to start etching. When only the CCl4 gas is used to etch the Al in this case, there occurs a delay of several minutes - several ten order minutes until the etching starts. When Cl2 gas is mixed with the CCl4 gas, the time delay is largely accelerated, and this time delay may be reduced to zero by suitably selecting the pressure of the CCl4+Cl2 gases.

Inventors

• 👤 Takashi Yamazaki
• 👤 Yasuhiro Horiike

Bibliographic Details