Pattern forming material

Abstract

Abstract PURPOSE: To obtain a material forming the pattern of a circuit such as an integrated circuit and having high sensitivity and high resolution by using a copolymer contg. a specified percentage of tert-butyl methacrylate units as a resist material against deep ultraviolet rays. CONSTITUTION: A copolymer contg. 20W95% tert-butyl methacrylate units represented by formula I is used as a resist material. This copolymer is represented by formula II. This resist is fit for lithography with deep ultraviolet rays of 180W 350nm wavelengths and has superior resolution and sensitivity with a small quantity of exposure in the formation of a ≤1μ minute pattern. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Yasuhiro Yoneda
• 👤 Tateo Kitamura
• 👤 Jiro Naito
• 👤 Toshisuke Kitakoji

Bibliographic Details