Forming method of metal layer pattern

Abstract

Abstract PURPOSE: To easily form fine patterns of high melting point metals, etc. by a method wherein plasma CVD process is used to form silicon nitride film on a metal layer, the silicon nitride film is patterned by photography etching process, which pattern is used as mask for dry etching. CONSTITUTION: In pattern forming process of high melting metal or high melting metal silicide layer, for example, thermal oxidation is used to form an SiO 2 layer 12 on the surface of an Si substrate 11, then an Mo layer 13 is formed in sputtering device. On the Mo layer 13, Si 3 N 4 layer 14 is formed by plasma CVD method. Then, positive type photo-resist layer 15 is applied and photo-resist pattern is formed, then CF 4 plasma is used to dry-etch Si 3 N 4 layer 14 and followed by removing the resist layer 15 by N 2 plasma, then the Mo layer 13 is etched by dry etching. In this case, the Si 3 N 4 layer 14 is little etched so that fine patterns are easily formed. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Toshihiko Fukuyama
• 👤 Shintaro Yanagisawa

Bibliographic Details