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JPS5627562A Expired / Lapsed JP ⏱️ 0.0 years remaining

Tight image sensor

Assignee: NTT Inc
•
Filing: 1979-08-13
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Granted: —
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Expires: 1999-08-13
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Abstract

Abstract PURPOSE:To improve resolution by suppressing the diffusion of lighting luminous flux by providing an original-lighting transparent window for each bit over a transparent protective layer in a form that lightens up the original from below and photodetects the reflected light by a line of photoelectric converting elements. CONSTITUTION:On transparent substrate 6 made of glass, etc., shield layer 7 and transparent electrode 12 that permits light to transmit are arranged in contact with each other nearly in the center of the substrate and on shield layer 7, a line of photoelectric converting elements 8 using photoconductive material is formed; and transparent electrode 12 is formed at one side of photoelectric converting elements 8, and opaque electrode 9 of Al, InSn, etc., at the other side. At the side where original 2 comes in contact, transparent protective layer 11 is provided and on the layer, shield layer 14 is provided with transparent window 13 sandwiched. Here, transparent window 13 should be positioned over photoelectric converting elements 8. Then, lighting luminous flux 10 arriving slantingly from below transmits in only transparent window 13 and lightends up original 2, so that the lighting luminous flux will completely be limited by the transparent window without fading.

Inventors

  • 👤 Kazumi Komiya
  • 👤 Tetsuo Tajiri

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 20:58
CPC Classifications
H; H04; H04N; H04N1/00; H04N1/024; H04N1/028; H04N1/03; H04N1/031

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