Manufacture of photorecording thin film

Abstract

Abstract PURPOSE:To obtain a photorecording VO2 thin film having highly reproducible transition characteristics by forming a vacuum deposited film of V or a V alloy on a substrate of Pyrex or the like followed by heat treatment in a high purity N2 gas under specified conditions. CONSTITUTION:A photorecording thin film made of Magneli phase compound showing semiconductor-metal transition is manufactured as follows: metallic V or an alloy of V and other matallic element such as Ti, Cr or W forming Magneli phase on V is vacuum deposited on a substrate of glass, Pyrex or the like heated to 500+ or - 100 deg.C in a vacuum of (0.2-3)X10<-4>Torr oxygen partial pressure to form an about 900Angstrom thick VO2 thin film. While feeding high purity N2 gas at 400-800cc/min flow rate, the film is heat treated at 400-550 deg.C for 1-10hr to improve the unstableness of the composition and structure by the rearrangement of the VO2 layer. Thus, the resulting photorecording thin film has high reproducibility and high contrast ratio.

Inventors

• 👤 Masaharu Fukuma
• 👤 Sakae Maebotoke
• 👤 Shintaro Miyazawa

Bibliographic Details