Hall-effect device

Abstract

Abstract PURPOSE:To manufacture a Hall-effect device of high dielectric strength between a semiconductor substrate and sensor regions, by epitaxially growing a layer of one electroconductive type on the semiconductor substrate of the reverse electroconductive type and providing the sensor regions of the latter electroconductive type in the layer. CONSTITUTION:An N-type layer 12 is epitaxially grown on a P-type semiconductor substrate 11. The layer 12 is separated as an island by a P-type diffused region 13 extending to the substrate 11. The entire obverse side is coated with an oxide film 20. Openings are provided through the film 20 at both ends of the insular layer 12. N<+>-type regions 14 for causing a Hall-effect current to flow are produced at opposed positions in the layer 12 by diffusion. Electrodes 18 are attached to the regions 14. P-type regions 16 are produced by diffusion so that the P-type regions are located in opposed positions between the regions 14. N<+>-type sensor regions 17 are provided in the P-type regions 16. Electrode 19 for a sensor are attached to the sensor regions 17. As a result, dielectric strength between the substrate 11 and the regions 17 is heightened. Therefore, an operating voltage can be raised. Moreover, the point contact accuracy of the regions 17 is improved.

Inventors

• 👤 Kiyoshi Nishimura

Bibliographic Details