Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To eliminate or reduce the density of recombination center or crystal defects in the semiconductor device by optically annealing the surface of semiconductor with laser or the like, and optically annealing it in atmosphere added with halogen element or inert gas to H2 or He activated. CONSTITUTION:An Si substrate is irradiated with CW laser of 70W power or the like to anneal the layer of approx. 3mu. Then, it is contained in an atmosphere added with 30-70% of He to H2 or H2, or with 0.1-3% of halogen element such as F or the like in furnace, and the furnace is excited by high frequency induction of 1-100MHz at -70 deg.C-+200 deg.C. The H of nascent state is immersed without any trouble to combine with Si or O2 existed in the semiconductor, insulator or their boundary to neutralize it. In this manner it is laser annealed, and then induction annealed to neutralize the defect which cannot be treated by the laser annealing in depth so as to improve the property of the device very effectively.

Inventors

• 👤 Shunpei Yamazaki

Bibliographic Details