Manufcture of semiconductor device

Abstract

Abstract PURPOSE:To enable the patterning of very high accuracy without side etching, by adding ion injection to lithography. CONSTITUTION:A phosphosilicate glass film 2 is coated on the surface of an Si substrate 1. A photoresist film 3 is coated on the film 2. Exposure and development are effected through a required mask to provide an opening 4 in the film 3 by patterning. The film 3 is used as a mask to inject phosphorus ions through the surface into the portion of the film 2 exposed in the opening 4. As a result, a larger amount of phosphorus is injected into the exposed portion of the film 2 than its other portion coated with the film 3 and the adhesive power of the film 3 to the other 2 is greatly heightened. Etching is then performed. Since the films 2, 3 are tightly fitted on each other, no etching solution invades in between the films. Since the exposed portion of the film 2 contains more phosphorus than its other portion, the etching speed of the exposed portion is so high that the etching of the exposed portion is completed before sides of low phosphorus content are etched.

Inventors

• 👤 Yasuo Arima
• 👤 Kazuya Nagase

Bibliographic Details