Detection of etching end point in plasma processor

Abstract

Abstract PURPOSE:To accurately detect the etching end point in the plasma processor by applying constant current or voltage between electrodes and utilizing the lowest point of high frequency output or the highest point of the high frequency current. CONSTITUTION:A pair of parallel flat plate electrodes 1 are contained in a processing chamber 2, high frequency current is applied from a high frequency constant current source 3, is monitored by a power meter 4, and is recorded by a recorder 5. Discharge executes constant voltage effect, but when the etching approaches its end, the base produced upon reaction of the etching gas with article to be etched is reduced. When the atmosphere in the chamber 2 is altered, potential is lowered to present the lowest point P to stop the etching at this point. In this configuration, the processing chamber may not be revised out only predetermined electric circuit may be connected thereto. Since only high frequency output is monitored, it can accurately detect it.

Inventors

• 👤 Yoshiaki Ishii

Bibliographic Details