Semiconductor device

Abstract

Abstract PURPOSE:To avoid the reduction of a lifetime for a semiconductor device by adding an impurity which has metallic properties in a single substance and becomes predetermined conducting type in a semiconductor under an electrode formed in a P-type or an N-type nonmonocrystalline semiconductor forming a P-N junction in a photoelectric element, a solar battery or the like. CONSTITUTION:A P-N junction is formed with a P-type semiconductor 11 and an N-type semiconductor 12, an electrode 11 is mounted at the end of the semiconductor 11, a confronting electrode 18 is mounted at the end of the semiconductor 12, a load resistor 13 is connected to the electrodes to form a photoelectric element or the like. In this configuration, a light 7 is radiated to the junction, Halls produced are diffused at the side of the semiconductor 11, and electrons are diffused to the side of the semiconductor 12 so as to obtain potential 14. In this configuration both the semiconductors 11 and 12 are formed of nonmonocrystalline semiconductor enabling high impurity density. In or the like is diffused under the electrode 17, and Sb or Te or the like is diffused under the electrode 18 in high density to produce degenerating regions 21 and 22. In this manner the recombination of the light excitation carrier in the long wavelength region is prevented.

Inventors

• 👤 Shunpei Yamazaki

Bibliographic Details