Plasma cleaning method

Abstract

Abstract PURPOSE:To enhance the etching reproducibility of the plasma cleaning method in a parallel flat plate type plasma etching apparatus applied with high frequency wave thereto by removing contaminants by employing the discharge of the same halogen element as gas containing halogen element used for the etching method. CONSTITUTION:When a halogen element is introduced into a vacuum container 1 and high frequency voltage is applied thereto, a glow discharge occurs thereat to produce a gas plasma 19. Adhesive is accumulated or adhered onto the inner wall of an insulating teflon 5 or the vacuum container 1 due to an after-glow out of the electrode. Then, chlorine gas plasma is generated by the high frequency voltage in the container 1 to evacuate the container 1 to conduct plasma cleaning therein. Then, it can remove and clean contaminants such as products formed upon discharge at the time of etching it.

Inventors

• 👤 Yasuhiro Horiike
• 👤 Masahiro Shibagaki
• 👤 Takashi Yamazaki

Bibliographic Details