Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To readily form a deep P-N junction at a part of a shallow P-N junction for short time in a semiconductor device by irradiating a laser light to the limited region of an impurity doped layer on the surface of a semiconductor substrate to deeply diffuse it in the limited region. CONSTITUTION:An impurity doped layer is fromed on the surface of a P-type Si substrate 1, and laser light 3 is irradiated thereto to from an N-type Si layer 4. After forming a mask thereon, a laser light 7 is irradiated to deeply diffuse only the portion of the N-type Si layer 4 exposed with an opening 5 of the mask 6 to form a deep P-N junction 8. Then, electrode metal is evaporated in the state that the mask 6 is carried thereon, the mask 6 is then removed to form an electrode metal layer 11.

Inventors

• 👤 Mitsunori Ketsusako
• 👤 Haruo Ito
• 👤 Tadashi Saito
• 👤 Nobuo Nakamura
• 👤 Takashi Tokuyama

Bibliographic Details