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JPS56147146A Expired / Lapsed JP ⏱️ 0.0 years remaining

Photoetching method

Assignee: Fujitsu Ltd
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Filing: 1980-04-18
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Granted: —
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Expires: 2000-04-18
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Abstract

Abstract PURPOSE:To avoid unfavorable influence resulting from reflected light emitted from the surface of a body to be etched in exposure and enhance the etching accuracy by adding a light absorbing substance to a photoresist to regulate the light or electromagnetic wave absorptance of the photoresist. CONSTITUTION:A coloring material such as auramine conc. is added to an ultraviolet sensitive photoresist such as a composition prepared by dispersing naphthoquinone azide in novolak type phenol resin. Photoetching is carried out using the resulting photoresist with regulated absorptance such as >= about 0.5 absorbance to ultraviolet rays for exposure. This method is especially effective when applied to the exposure of a resist on a body of Al or the like with high reflectance to be etched using monochromatic light such as light having 435nm wavelength from a mercury lamp.

Inventors

  • 👤 Masao Kanazawa

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 12:51
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/0226

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

JPS5137562A Cited
JPS5230428A Cited
JPS52130286A Cited
JPS5536838A Cited

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