Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the lateral spread of an oxide film by selectively forming an SiO2 film on an Si substrate and oxidizing the top and the side thereof with Si3N4 as a mask. CONSTITUTION:The Si3N4 mask 7' is provided so as to cover the top and the sides of the SiO2 film 6' which is selectively provided on the Si substrate 1, and selective oxidating treatment is performed. In this method, a sufficiently thick SiO2 film 8 can be formed under the state a peak end B2 is contacted with the film 6', stress in the vicinity of the substrate surface is small, the lateral spread of the film 8 can be made small, and the high density devices can be obtained.

Inventors

• 👤 Osamu Ishikawa
• 👤 Takeya Ezaki
• 👤 Masabumi Kubota
• 👤 Kosei Kajiwara

Bibliographic Details