Thyristor

Abstract

Abstract PURPOSE:To obtain a thyristor having excellent turn-on time and di/dt characteristic by making both ends of the gate electrode project towards the auxiliary emitter side, while making auxiliary electrodes which oppose parallelly adjacent to the gate electrode into cavity form in order to enlarge the turn-on area. CONSTITUTION:P-type impurity is diffused on an N-type semiconductor wafer to form a thyristor 1 having a three-layer structure of PeNbPb with PN junctions J1 and J2. An N-type emitter region Ne and an auxiliary emitter region He are provided on the P-type base layer Pb on selective diffusion by using a photoetching process or the like. Then short-circuit holes 10 are made in each of the regions by etching. Moreover, anode, cathode and gate electrodes and auxiliary electrodes A, K, G and H are provided on the regions Ne and He respectively. In the thyristor thus constituted, the electrode G is provided with projecting portions at both ends, and the electrode H corresponding thereto is provided with cavities into which said projecting portions are set in order to enlarge the turn-on area.

Inventors

• 👤 Takeshi Suzuki
• 👤 Katsumi Akabane
• 👤 Yoichi Nakajima
• 👤 Isao Kojima

Bibliographic Details