Negative type ionized radiation sensitive resist

Abstract

Abstract PURPOSE:To obtain a negative type resist sensitive to ionized radiation by using a halogenated allyl ester of acrylic acid or methacrylic acid. CONSTITUTION:A polymer represented by the formula (where R is H or CH3 and X is halogen such as F or Cl) or a copolymer of the monomer and other monomer is dissolved in a solvent to prepare a resist soln. This soln. is applied to a semiconductor substrate or a mask substrate with a spinner, dried, and prebaked. The resulting film is then exposed to ionized radiation such as electron beams or X-rays and developed. By introducing halogenated allyl groups, the polymer shows high cross-linkability to radiation and is provided with superhigh sensitivity as a resist, and a high- density resist pattern of submicron unit can be formed.

Inventors

• 👤 Yuzo Shimazaki

Bibliographic Details