Dry etching apparatus

Abstract

Abstract PURPOSE: The above-mentioned apparatus, enabled to obtain a high etching speed, by providing with the means which apply an alternating current voltage of a fixed frequency limits on the sample at the microwave plasma etching apparatus. CONSTITUTION: Active ion in the generated plasma 19 is irradiated on the sample 8 moving along the mirror field and the surface of the sample 8 is etched here. At this time, 10kHzW100MHz AC voltage is applied on the sample 8 and the sample stand 9 by the following means. This applying means are constructed by connecting the high frequency electric power source 10 with the primary side coil of the air-core transformer 20 and connecting the stand 9 with the one end of the secondary side coil and also, connecting the capacitor 12 with the other end of the secondary side coil and then, earthing the other end of the capacitor 12. Besides, either sine wave or rectangular positive and negative pulse, is suitable for the waveform of the above-mentioned AC voltage to be applied, but it is preferable to make the time of duration of negative voltage longer than that of positive voltage in case of the pulse. COPYRIGHT: (C)1981,JPO&Japio

Inventors

• 👤 Keizo Suzuki
• 👤 Sadayuki Okudaira
• 👤 Shigeru Nishimatsu
• 👤 Ichiro Shikamata

Bibliographic Details