Semiconductor device

Abstract

Abstract PURPOSE:To obtain a device provided with a highly reliable blocking capability, by providing collector electrodes in such a manner as to stick out from circumferences of both main surfaces of a semiconductor substrate whose p-n joint is exposed to the side surface, and also by covering side surfaces of the both electrodes with protective membranes. CONSTITUTION:A thick p type emitter layer 1 and a thin p type base layer 3 are formed on an n type Si 2, and an n type emitter layer 4 is selectively arranged on the layer 3. An anode 5, a cathode 6 and a control electrode 7 are provided in contact with respective main surface 101 and 102, and in a region 41, the p base 3 and the n emitter 4 are shortcircuited by the cathode 6. A side surface 103, where p-n joints J1 and J2 are exposed, is so processed as to become positive level. In contact with end sections 300 and 400 of respective main surfaces, ohmic electrodes 8 and 9 are provided in such a manner as to stick out from the circumferencial edge and form an annular configuration. As small amount of impurity iron is accumulated on surface of a semiconductor, it is possible to obtain an extremely stable device without allowing leak current to increase.

Inventors

• 👤 Tokuo Watanabe
• 👤 Masami Naito
• 👤 Tsutomu Yao
• 👤 Masahiro Okamura

Bibliographic Details