JPS56124134A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Light storage medium and its production
Assignee: NTT Inc
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Filing: 1980-03-04
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Granted: —
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Expires: 2000-03-04
Abstract
Abstract PURPOSE:To reduce the energy required for writing, by using In of a low-melting point metal together with SiO2 as the light storage medium. CONSTITUTION:In respect to the simultaneous vapor-deposition film of In and SiO2, individual electron guns are used to vapor-deposit In and SiO2, respectively, thereby obtaining this film. Quartz oscillation type film thickness monitors are arranged for respective electron guns to control vapor-deposition speed, thereby controlling mixture rates of In and SiO2. The figure shows evidently that the writing threshold is minimum for the composition of 40-60vol% SiO2.
Inventors
- 👤 Atsushi Shibukawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 19:36
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/2431; G11B2007/24312; G11B2007/24318; G11B2007/2432
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